This tool uses JavaScript and much of it will not work correctly without it enabled. Simply select an application and click through to the block diagram to discover our semiconductor solutions.At first, the value of âthermal resistance Rth(j-a)â is calculated by using the datasheet data below. Typical Voltage and Current values are found in the datasheet The thermal resistance value for the S25FS512SAGBHI210 flash device From the given formula, the Operating Junction Temperature is: Tj = 85°C + (39 °C/W) (140 mW) = 90.46°CError: You don't have JavaScript enabled. In operation, it is higher than case temperature and the temperature of the part's exterior. To study the relationship between junction temperature and top surface temperature, we ran ThermaSim™ under specific conditions. This temperature is commonly higher than the temperature of the device's exterior and its case. Junction temperature is calculated by using the above thermal resistance. In the right column, you can enter a heat sink capacity and calculate the expected junction temperature. (1) T j = R th LED * P thermal + T PCB = R th LED * (P electrical - P optical) + T PCB P thermal
In the left column, you can enter a target junction temperature and calculate the required heat sink capacity. The ambient temperature shall be 25 [deg.C].Junction temperature is calculated by using the above thermal resistance.For a semiconductor device package used with a heat sink, in order to ensure more accurate calculations, thermal resistance of junction-to-case values should be used instead of thermal resistance of junction-to-ambient values.For calculation of junction temperature, please refer to âThermal Design and Attachment of a Thermal Fin: Power MOSFET Application NotesâToshiba Launches 100V N-channel Power MOSFETs in Compact Package for Automotive ApplicationsToshibaâs New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of EquipmentToshiba Launches General-Purpose System Power IC with Multiple Outputs for Automotive Functional SafetyToshibaâs New Three-Phase Brushless Motor Control Pre-Driver IC Features Sensorless Control and Closed Loop Speed ControlAbout information presented in this cross reference
ΔT j [deg.C]＝ R th(j-a) [deg.C/W] × P LOSS [W] T j = ΔT j + T a ΔT j: Junction temperature rise R th(j-a): Thermal resistance, junction to ambient P LOSS: Power dissipation in semiconductor device T j: Junction temperature T a: Ambient temperature The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Si4800BDY: SO-8 SINGLE-DIE, BONDING-WIRED PACKAGE Figure 1 shows the ThermaSim results of the Si4800BDY when dissipating 0.5 W. The results show a … Junction temperature, short for transistor junction temperature, is the highest operating temperature of the actual semiconductor in an electronic device. In both cases, you can change your assumptions about ambient air temperature, type of thermal interface and level of input current.